Paper
8 March 1995 Infrared optically active structure obtained by plasma-assisted deposition (PAD) of III-V and II-VI binary compound thin layers
Victor Rares Medianu, Stefan A. Manea, Mihail F. Lazarescu
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Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203483
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
Abstract
A possible mechanism for the chemical interactions during the argon plasma assisted deposition of thin layers of AIIIBV and AIIBVI binary compounds is presented. The model is aimed to serve as a basis to guide the experimental conditions for the obtaining of reflective or anti-reflective stoichiometric films on different substrates used as laser optical components. The theoretical assumptions were found in a good agreement with the results of the structural and optical properties measurements in case of ZnS and GaAs deposition from polycrystalline targets on (100) oriented GaAs singlecrystalline substrates. X- ray diffractometry and scanning electronic microscopy as well as IR transmission techniques were used in this respect.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor Rares Medianu, Stefan A. Manea, and Mihail F. Lazarescu "Infrared optically active structure obtained by plasma-assisted deposition (PAD) of III-V and II-VI binary compound thin layers", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); https://doi.org/10.1117/12.203483
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KEYWORDS
Gallium arsenide

Plasma

Zinc

Binary data

Chemical elements

Crystals

Sputter deposition

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