Paper
1 September 1995 Enhancement of ultrashort photoelectric emission sensitivity of metals by alkaline ions implantation
Jean-Pierre Girardeau-Montaut, M. Afif, A. Perez, Claire Girardeau-Montaut, Corinne Tomas
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Abstract
The production of high photoelectron densities from metallic photocathodes under ultrashort visible and UV-laser finds applications in various fields. Many workers tried, by the use of different techniques, to improve the photoelectric performances of pure metals, essentially W and Mo, but all these prepared photocathodes were not able to withstand very high laser intensities, i.e., >= 1GW/cm2. We demonstrate that ion implantation is a valuable new tool to improve the photoelectric emission yield of pure metals. An enhancement of the sensitivity by a factor 5 to 50 was measured in ion potassium implanted tungsten irradiated by subpicosecond laser pulses with peak intensity of a few GW/cm2. Data on tungsten implanted by calcium and barium ions is also reported. An investigation of the chemical and physical properties at the origin of this enhancement are also reported. Optical and structural properties of these new materials were investigated by various techniques like reflectometry, ellipsometry, and grazing incidence x-ray diffraction, while the chemical structure of surfaces was determined by AES and XPS. The measurable changes on reflectivity and ellipsometric measurements can be interpreted both by the interface layer due to the radiation induced damage and by a modification of the dielectric function of W in the presence of ion-impurity.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Pierre Girardeau-Montaut, M. Afif, A. Perez, Claire Girardeau-Montaut, and Corinne Tomas "Enhancement of ultrashort photoelectric emission sensitivity of metals by alkaline ions implantation", Proc. SPIE 2521, Time-Resolved Electron and X-Ray Diffraction, (1 September 1995); https://doi.org/10.1117/12.218365
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KEYWORDS
Metals

Tungsten

Ion implantation

Ions

Potassium

Pulsed laser operation

Semiconductors

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