Material processing and advanced well structures using high-energy implantation for EPI replacement

Dirk Wristers; Chris Eiting; Wes Morris; Dim-Lee Kwong; Jim Fulford

doi:10.1117/12.221455

22 September 1995 Material processing and advanced well structures using high-energy implantation for EPI replacement

Dirk Wristers, Chris Eiting, Wes Morris, Dim-Lee Kwong, Jim Fulford

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221455
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

With the cost of each new technology generation increasing at an alarming rate, it has become imperative that technologies which provide for process simplification and material cost reduction be seriously investigated. Many of the next generation technologies for logic as well as memory applications have incorporated some vertical modulation of the well dopant concentration. This type of structure can provide process simplification and an improved isolation strategy, but with more aggressive engineering of the substrate dopant concentration and the current gain of the parasitic bipolar transistors that exist in the CMOS structure superior, latch-up immunity has been demonstrated on both simulated and actual devices. Devices with an aggressive 2 micron P⁺ to N⁺ spacing were built with this innovative well structure and have been shown to provide outstanding latch-up performance (4X improvement in measured trigger current) as compared to that of devices built with a standard diffused well process. In addition to providing an analysis of the latch-up performance of the advanced well structure, results of an investigation of the impact of high energy implantation on the gate oxide quality, junction quality and bulk material properties is discussed.

Citation Download Citation

Dirk Wristers, Chris Eiting, Wes Morris, Dim-Lee Kwong, and Jim Fulford "Material processing and advanced well structures using high-energy implantation for EPI replacement", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221455

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Silicon

Oxides

Resistance

Materials processing

Modulation

Standards development

Semiconducting wafers

Show All Keywords

Keywords/Phrases

Search In:

Publication Years