Paper
3 November 1995 Enhancement of light diffraction efficiency in semiconductors by microwave electric field: experiment and calculations
Liudvikas Subacius, Viktoras Gruzinskis, Eugenijus Starikov, P. Shiktorov, Kestutis Jarasiunas
Author Affiliations +
Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226168
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
In this paper, we present numerical simulation results of spatially modulated carrier transport and of non-linear optical phenomena for the case of non-uniform electron gas heating as well as the experimental data on light self-diffraction efficiency in external microwave fields. The expected field induced variations of refractive index modulation seen in light self-diffraction on transient gratings are determined mainly by electro-optical non-linearity due to enhanced internal field.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Liudvikas Subacius, Viktoras Gruzinskis, Eugenijus Starikov, P. Shiktorov, and Kestutis Jarasiunas "Enhancement of light diffraction efficiency in semiconductors by microwave electric field: experiment and calculations", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226168
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KEYWORDS
Gallium arsenide

Diffraction

Silicon

Crystals

Diffraction gratings

Modulation

Electro optics

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