Paper
3 November 1995 Optical characterization of the structure of SIPOS layers
I. P. Lisovskii, Vladimir G. Litovchenko, V. B. Lozinskii, E. V. Mischenko, Walter Fussel
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226160
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
Using IR spectroscopy, Rutherford back-scattering technique and optical microscopy the structure of SIPOS films produced by CVD method is investigated. The network of oxygen- doped silicon is shown to represent a mixture of Si-Oy-Si4-y complexes with 0 less than or equal to y less than or equal to 4 and micro-inclusions of strongly oxidized silicon. Contribution of these complexes is dependent on the processes of layer growth and post- treatments. IR spectroscopy was demonstrated to be a convenient technique for determination of oxygen concentration and structural arrangement in silicon-oxygen phase.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. P. Lisovskii, Vladimir G. Litovchenko, V. B. Lozinskii, E. V. Mischenko, and Walter Fussel "Optical characterization of the structure of SIPOS layers", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226160
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KEYWORDS
Oxygen

Silicon

Absorption

Deconvolution

Chemical species

Infrared spectroscopy

Optical microscopy

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