Optical constants of thin-film gallium sulfide layers

Phillip Jenkins; Meg L. Tuma; David H. Naghski; Andrew MacInnes

doi:10.1117/12.236130

25 March 1996 Optical constants of thin-film gallium sulfide layers

Phillip Jenkins, Meg L. Tuma, David H. Naghski, Andrew MacInnes

Proceedings Volume 2686, Integrated Optics and Microstructures III; (1996) https://doi.org/10.1117/12.236130
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Gallium sulfide (GaS) deposited by chemical vapor deposition (CVD) is known to passivate GaAs surfaces. In this paper we examine the thin film optical properties of GaS as they relate to the fabrication of optical waveguides. Spectroscopic ellipsometry was used to determine the index of refraction of GaS films deposited on various substrates. Results indicate that GaS has a high index of refraction suitable for waveguide structures. A gallium sulfide waveguide could provide both the optical interconnect and the passivating layer of GaAs integrated circuits. Progress toward fabricating GaS waveguides is also discussed.

Citation Download Citation

Phillip Jenkins, Meg L. Tuma, David H. Naghski, and Andrew MacInnes "Optical constants of thin-film gallium sulfide layers", Proc. SPIE 2686, Integrated Optics and Microstructures III, (25 March 1996); https://doi.org/10.1117/12.236130

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