Improved mask metrology system for 1-Gb DRAM

Eiji Matsubara; Taro Ototake

doi:10.1117/12.240124

21 May 1996 Improved mask metrology system for 1-Gb DRAM

Eiji Matsubara, Taro Ototake

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240124
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

When we started to develop the mask metrology system named the XY-5i, the photomasks were supposed to be used only until 256M DRAM generation. However, now we are sure that the photomasks can also be applied to the 1G DRAM generation, or 180 nm pattern rule on a wafer. Thus we need to develop a metrology system for the 1G bit through 4G bit DRAM generations. In order to improve the metrology system's performance, we have introduced some new technologies and succeeded in realizing the improvement of the performance ability of the XY-5i. Now the XY-5i has the high technical performance and functions which are good enough to be the mask metrology system for the new generation of 1G DRAM. Moreover, in the XY-5i, we have developed some new metrology functions, such as coordinate measurement of pelliclized masks. We could get some data of the issue regarding the variation of the coordinates between before and after its pelliclization which has been seldom discussed so far.

Citation Download Citation

Eiji Matsubara and Taro Ototake "Improved mask metrology system for 1-Gb DRAM", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240124

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KEYWORDS

Photomasks

Metrology

Pellicles

Distortion

Lithography

Semiconducting wafers

Lithium

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