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The GaAs layers of a thickness of 200 nm and donor concentration of about 1018 cm-3 were bombarded by 0+ ions with doses above 1013 cm-2 at the energies of 125, 150, and 250 keV. The dc and ac conductivities of GaAs layers at the temperatures of 77 - 330 K were investigated. The dc measurements of the resistivity as at function of temperature indicate the following relationship: ln(rho) approximately equals T-1/4. It confirms the variable-range of hopping conductivity. The ac conductivity measurements of GaAs layers in the frequency range of 15 Hz - 30 kHz show the dependence of an activation energy on trap emissivity according to the formulae e approximately equals exp(-Ea/kT). The values of an activation energy calculated from the slope of Arhenius line is of 75.06 meV.
Zdzistaw Synowiec,A. Romanowski, andMaria Dabrowska-Szata
"Conductivity measurement of GaAs layers after oxygen ion bombardment", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238148
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Zdzistaw Synowiec, A. Romanowski, Maria Dabrowska-Szata, "Conductivity measurement of GaAs layers after oxygen ion bombardment," Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238148