LBIC investigation of the dynamic behavior of trapping-recombination centers

Bogdan Paszkiewicz; A. Romanowski; Regina Paszkiewicz; Marek Panek; Marek J. Tlaczala; Przemyslaw Andrzejewski

doi:10.1117/12.238144

8 April 1996 LBIC investigation of the dynamic behavior of trapping-recombination centers

Bogdan Paszkiewicz, A. Romanowski, Regina Paszkiewicz, Marek Panek, Marek J. Tlaczala, Przemyslaw Andrzejewski

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238144
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

The LBIC method was used to investigate the trapping-recombination centers in GaAs:Si layers grown by MOCVD method. The special test structure was developed and performed. The model which joins the measured signal changes with the presence of trapping centers from substrate (EL2 deep levels) and surface.

Citation Download Citation

Bogdan Paszkiewicz, A. Romanowski, Regina Paszkiewicz, Marek Panek, Marek J. Tlaczala, and Przemyslaw Andrzejewski "LBIC investigation of the dynamic behavior of trapping-recombination centers", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238144

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