Magnetic ions in semiconductor quantum wells and superlattices

Jan A. Gaj

doi:10.1117/12.238151

8 April 1996 Magnetic ions in semiconductor quantum wells and superlattices

Jan A. Gaj

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238151
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

The advantages of introduction of magnetic ions in semiconductor quantum structures are discussed and illustrated by relevant examples from recent research results, such as growth of spin superlattices and studies of resonant tunneling in double quantum well structures. Particular attention is paid to non-conventional methods of characterization of interfaces made possible by the presence of magnetic ions: spin tracing, useful for determination of the interface composition profile width, and detection of undulation of the quantum well surface by temperature dependent polarization measurements of the Mn ESR Raman cascade.

Citation Download Citation

Jan A. Gaj "Magnetic ions in semiconductor quantum wells and superlattices", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238151

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available