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The behavior of the magnetron sputtered Ge films under annealing in vacuum at various temperatures up to 1173 K is described. The relation between the dc conductivity and the thermoelectric power versus temperature (300 - 500 K) for films annealed in various conditions is given. The changes in the electrical parameters of films were correlated with data obtained from structural analysis and the optical measurements.
Graznya Beensh-Marchwicka,Stanislaw Osadnik, andEugeniusz Prociow
"Thermoelectric properties of high-temperature recrystallized Ge films", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238158
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