Novel planar electroabsorption waveguide modulator for rf applications

Qizhi Z. Liu; Robert B. Welstand; Richard Joseph Orazi; Stephen A. Pappert; Paul K. L. Yu; S. S. Lau

doi:10.1117/12.259023

22 November 1996 Novel planar electroabsorption waveguide modulator for rf applications

Qizhi Z. Liu, Robert B. Welstand, Richard Joseph Orazi, Stephen A. Pappert, Paul K. L. Yu, S. S. Lau

Proceedings Volume 2844, Photonics and Radio Frequency; (1996) https://doi.org/10.1117/12.259023
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

Planar electroabsorption InP/InGaAsP waveguide modulators suitable for RF applications have been fabricated using the photoelastic effect. The planar device structure is achieved by using WNi thin film surface stressors for lateral waveguiding and helium implantation for electrical isolation between devices. These are the first reported frequency measurements on a photoelastic InP/InGaAsP waveguide modulator.

Citation Download Citation

Qizhi Z. Liu, Robert B. Welstand, Richard Joseph Orazi, Stephen A. Pappert, Paul K. L. Yu, and S. S. Lau "Novel planar electroabsorption waveguide modulator for rf applications", Proc. SPIE 2844, Photonics and Radio Frequency, (22 November 1996); https://doi.org/10.1117/12.259023

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available