Influence of carbon contamination on ultrathin gate oxide reliability

Toshiyuki Iwamoto; Toshiki Miyake; Tadahiro Ohmi

doi:10.1117/12.250867

13 September 1996 Influence of carbon contamination on ultrathin gate oxide reliability

Toshiyuki Iwamoto, Toshiki Miyake, Tadahiro Ohmi

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250867
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

When Si wafer is transported after gate oxidation process, the gate oxide surface is exposed to the clean room air and hydro-carbons in the clean room air adhere to the gate oxide surface. In this paper, we have demonstrated that the carbon contamination caused by the wafer exposure to the clean room air induces the degradation of the gate oxide reliability, and we have improved the gate oxide performance by using a closed system, where the oxidation is followed by in-situ phosphorous-doped polysilicon gate formation. Carbon contamination is serious problem for gate oxide film used under high electricfield condition such as a tunnel oxide for flush memories.

Citation Download Citation

Toshiyuki Iwamoto, Toshiki Miyake, and Tadahiro Ohmi "Influence of carbon contamination on ultrathin gate oxide reliability", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250867

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