Reliability scaling in deep submicron MOSFETs

Tadahiko Horiuchi; Hiroshi Ito; Naohiko Kimizuka

doi:10.1117/12.250856

13 September 1996 Reliability scaling in deep submicron MOSFETs

Tadahiko Horiuchi, Hiroshi Ito, Naohiko Kimizuka

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250856
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

This paper reviews scaled reliability of deep sub-micron MOSFETs, including hot-carrier effects and oxide-breakdown. On the point of practical device design, the former constrains the maximum applicable voltage with the scaling factor of k^-1/2. The latter give that with the scaling fact of k^-1. It is shown that the limiting factor of operating voltage switches from hot-carrier effects to thin oxide reliability at a 0.25 micrometers device.

Citation Download Citation

Tadahiko Horiuchi, Hiroshi Ito, and Naohiko Kimizuka "Reliability scaling in deep submicron MOSFETs", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250856

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available