Simulated calculation of temperature rise in silicon material irradiated by high-power laser

Zhonghua Shen; Jian Lu; Xiao-Wu Ni

doi:10.1117/12.253130

30 September 1996 Simulated calculation of temperature rise in silicon material irradiated by high-power laser

Zhonghua Shen, Jian Lu, Xiao-Wu Ni

Proceedings Volume 2888, Laser Processing of Materials and Industrial Applications; (1996) https://doi.org/10.1117/12.253130
Event: Photonics China '96, 1996, Beijing, China

Abstract

Considering the variety of thermal properties of silicon material and the spatial profile of incident laser, the temperature rise in silicon material has been obtained by using a 2D model of heat conduction, the relation between the time needed for the surface to reach melting point and the power density of the incident laser has also been given out and the results have been compared with those obtained by using a 1D model.

Citation Download Citation

Zhonghua Shen, Jian Lu, and Xiao-Wu Ni "Simulated calculation of temperature rise in silicon material irradiated by high-power laser", Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); https://doi.org/10.1117/12.253130

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