Paper
7 July 1997 Function-integrated alicyclic polymer for ArF chemically amplified resists
Katsumi Maeda, Kaichiro Nakano, Shigeyuki Iwasa, Etsuo Hasegawa
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Abstract
We have designed a function-integrated alicyclic polymer, poly[carboxy-tetracyclo(4.4.0.12,5.17,10)dodecyl methacrylate] [poly(CTCDDMA)], which has both a dry- etching resistant unit (the tetracyclododecyl group) and a carboxyl substituent, inducing alkaline-solubility. This polymer exhibits good dry-etching resistance; the etching rate for chlorine plasma is 1.2 times that for the novolac resist because it contains 100 mol% of the alicyclic groups. It also exhibits good solubility in a TMAH solution and good adhesion to the silicon substrate because of the hydrophilic carboxyl group. The chemically amplified resist composed of the ethoxyethyl-protected copolymer poly(CTCDDMA67-ECTCDDMA33) with a photoacid generator resolved a 0.15-micrometer L/S pattern at 21.8 mJ/cm2 using an ArF exposure system (NA equals 0.55).
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsumi Maeda, Kaichiro Nakano, Shigeyuki Iwasa, and Etsuo Hasegawa "Function-integrated alicyclic polymer for ArF chemically amplified resists", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275822
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Cited by 9 scholarly publications.
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KEYWORDS
Polymers

Etching

Resistance

Carbon

Chemically amplified resists

Chemical species

Silicon

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