Novel single-layer chemically amplified resist for 193-nm lithography

Sang-Jun Choi; Yool Kang; Dong-Won Jung; Chun-Geun Park; Joo-Tae Moon

doi:10.1117/12.275878

7 July 1997 Novel single-layer chemically amplified resist for 193-nm lithography

Sang-Jun Choi, Yool Kang, Dong-Won Jung, Chun-Geun Park, Joo-Tae Moon

Proceedings Volume 3049, Advances in Resist Technology and Processing XIV; (1997) https://doi.org/10.1117/12.275878
Event: Microlithography '97, 1997, Santa Clara, CA, United States

Abstract

A new class of photoresist matrix polymer based on alicyclic cyclopolymer was developed for use in ArF single-layer lithography. A novel polymer was synthesized by terpolymerization reaction between tert-butyl methacrylate and alicyclic-maleic anhydride alternating copolymer, which has a hydroxy substituent on the alicyclic group. The polymer showed good solubility in a 2.38 wt% TMAH aqueous solution, high thermal stability up to 180 degrees Celsius, and a good dry- etch resistance against CF₄ gas (1.14 times the etching rate of novolak resist). Using an ArF excimer laser exposure system, 0.14 micrometer line and space patterns have been resolved.

Citation Download Citation

Sang-Jun Choi, Yool Kang, Dong-Won Jung, Chun-Geun Park, and Joo-Tae Moon "Novel single-layer chemically amplified resist for 193-nm lithography", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275878

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