Paper
11 September 1997 Evaluation of pad life in chemical mechanical polishing process using statistical metrology
N. Moorthy Muthukrishnan, Sharad Prasad, Brian Stine, William Loh, Ron Nagahara, James E. Chung, Duane S. Boning
Author Affiliations +
Abstract
Statistical meirology was used to characterize the pad life in chemical mechanical polishing process. A special chip containing capacitor structures with dimensions laid out as per a fractional factorial design of experiment was used as a lest vehicle in this study. The wafer lot was separated into four splits and each split was polished at a different time depending on the wafer count since the last pad change in the chemical mechanical polishing system. Capacitance measurements were done on the test capacitors and the IMD thickness was determined from the 2D simulation of the capacitor. The wafer-level and die-level variations were determined using an application software program known as Variation Decomposition Analysis Program . The useful pad life can be determined by selecting the wafer count below which inter- and intra-die variations are allowable.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Moorthy Muthukrishnan, Sharad Prasad, Brian Stine, William Loh, Ron Nagahara, James E. Chung, and Duane S. Boning "Evaluation of pad life in chemical mechanical polishing process using statistical metrology", Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); https://doi.org/10.1117/12.284688
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Chemical mechanical planarization

Metals

Metrology

Capacitance

Capacitors

Data modeling

Back to Top