Mid-infrared GaSb-InAs-based multiple quantum well lasers

Alexei N. Baranov; N. Bertru; Y. Cuminal; G. Boissier; Y. Rouillard; J. C. Nicolas; P. Grech; Andre Francis Joullie; Claude L. Alibert

doi:10.1117/12.304451

7 April 1998 Mid-infrared GaSb-InAs-based multiple quantum well lasers

Alexei N. Baranov, N. Bertru, Y. Cuminal, G. Boissier, Y. Rouillard, J. C. Nicolas, P. Grech, Andre Francis Joullie, Claude L. Alibert

Author Affiliations +

Proceedings Volume 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II; (1998) https://doi.org/10.1117/12.304451
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We report GaInAsSb/GaSb multiple quantum well lasers with type-II band alignment operating at room temperature. Basic properties of GaInAsSb/GaSb system in presence of strains are presented. Room temperature lasing has been achieved at wavelengths up to 2.65 micrometer. For the first time, stimulated emission has been obtained from a type-III quantum well structure at room temperature at 1.98 micrometer and 2.32 micrometer for the structures with 6- and 12-angstrom-thick InAs quantum wells, respectively. Modification of the band structure near interfaces of the type-II quantum wells due to carrier injection is shown to be a decisive factor allowing to obtain low threshold lasing in quantum well structures with indirect radiative recombination.

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Alexei N. Baranov, N. Bertru, Y. Cuminal, G. Boissier, Y. Rouillard, J. C. Nicolas, P. Grech, Andre Francis Joullie, and Claude L. Alibert "Mid-infrared GaSb-InAs-based multiple quantum well lasers", Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); https://doi.org/10.1117/12.304451

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