Advance of resist profile control in multilayer resist process for sub-150-nm lithography

Yasuki Kimura; Hiroyuki Endo; Akihiro Endo

doi:10.1117/12.312424

29 June 1998 Advance of resist profile control in multilayer resist process for sub-150-nm lithography

Yasuki Kimura, Hiroyuki Endo, Akihiro Endo

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312424
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

We achieved 100 nm hole resist patterns of aspect ratio over 10 in tri-layer resist process, where there was seen no bowing or undercut in the resist profile. To enhance a controllability of resist profile, we used organic conductive materials of lower durability against oxygen plasma than novolac photoresist as bottom layer in order both to achieve higher selectivity versus material of intermediate layer and to eliminate electron shading effect. In addition, deposition property induced by this material could be utilized to improve the resist profile under optimized dry development conditions. This efficiency to control resist profile was dependent on content of sulfur in this material. In this experiment, we could not find any apparent difference of resist profile improvement dependent on conductivity from 100 Mohm/square to more than 100 Gohm/square. This needs further investigation.

Citation Download Citation

Yasuki Kimura, Hiroyuki Endo, and Akihiro Endo "Advance of resist profile control in multilayer resist process for sub-150-nm lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312424

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