Some aspects of thick-film resist performance and modeling

Andreas Erdmann; Clifford L. Henderson; C. Grant Willson; Ralph R. Dammel

doi:10.1117/12.312349

29 June 1998 Some aspects of thick film resist performance and modeling

Andreas Erdmann, Clifford L. Henderson, C. Grant Willson, Ralph R. Dammel

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312349
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Realistic simulation of DNQ-novolac thick film resist performance requires accurate modeling of a number of steps including light propagation inside the resist and the development process. This paper addresses several advanced topics for the characterization and modeling of thick film resists including exposure induced changes in the resist refractive index and depth dependent development rate functions. Simulations performed using traditional light propagation models such as the scaled-defocus algorithm are compared to the new finite difference beam-propagation algorithm which can account for exposure induced resist refractive index changes. The impact of depth dependent development rate phenomena will also be discussed. A series of simulated profiles are compared to experimental results for two thick film resist series, AZ^TM AEP4000 and AZ^TM AE9200.

Citation Download Citation

Andreas Erdmann, Clifford L. Henderson, C. Grant Willson, and Ralph R. Dammel "Some aspects of thick film resist performance and modeling", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312349

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