Paper
20 April 1998 IR reflection spectra of the ZnO/Al2O3 structure
Evgenie F. Venger, A. V. Melnichuk, Y. A. Pasechnik, E. I. Sukhenko
Author Affiliations +
Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306195
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
The textured zinc oxide layers on sapphire, prepared by plasma chemical vapor deposition, were investigated with IR reflection spectroscopy in the residual rays region. A computer analysis of variance was used to simulate the reflection spectra of the structure studied and to calculate both charge carrier concentration and mobility in the zinc oxide layers.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Evgenie F. Venger, A. V. Melnichuk, Y. A. Pasechnik, and E. I. Sukhenko "IR reflection spectra of the ZnO/Al2O3 structure", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306195
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KEYWORDS
Zinc oxide

Sapphire

Phonons

Reflection

Infrared spectroscopy

Crystals

Spectroscopy

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