High-speed quantum well and quantum dot lasers

Pallab Bhattacharya; Xiangkun Zhang; Kishore K. Kamath; David Klotzkin; Jamie D. Phillips; Catherine Caneau; Rajaram J. Bhat

doi:10.1117/12.319650

19 August 1998 High-speed quantum well and quantum dot lasers

Pallab Bhattacharya, Xiangkun Zhang, Kishore K. Kamath, David Klotzkin, Jamie D. Phillips, Catherine Caneau, Rajaram J. Bhat

Author Affiliations +

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319650
Event: Photonics China '98, 1998, Beijing, China

Abstract

The characteristics of high-speed quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 micrometers (48 GHz) and 1.55 micrometers (26 GHz) by tunneling electrons directly into the lasing subband. In quantum dots the small-signal modulation bandwidth is limited by electron-hole scattering to approximately 7 GHz at room temperature and 23 GHz at 80 K.

Citation Download Citation

Pallab Bhattacharya, Xiangkun Zhang, Kishore K. Kamath, David Klotzkin, Jamie D. Phillips, Catherine Caneau, and Rajaram J. Bhat "High-speed quantum well and quantum dot lasers", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319650

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