Correlation of carrier lifetimes and arsenic-antisite defects in LT-GaAs grown at different substrate temperatures

Gong-Ru Lin; Tze-An Liu; Ci-Ling Pan

doi:10.1117/12.349311

24 May 1999 Correlation of carrier lifetimes and arsenic-antisite defects in LT-GaAs grown at different substrate temperatures

Gong-Ru Lin, Tze-An Liu, Ci-Ling Pan

Author Affiliations +

Proceedings Volume 3624, Ultrafast Phenomena in Semiconductors III; (1999) https://doi.org/10.1117/12.349311
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Subpicosecond carrier lifetimes of arsenic-rich GaAs grown by molecular beam epitaxy at low substrate temperatures have been determined by time-resolved reflectivity. Effect of growth temperature on change of transient reflectivity and antisite defect concentration were also demonstrated. For the first time carrier lifetime as short as 0.13 ps was observed (resolution limited).

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Gong-Ru Lin, Tze-An Liu, and Ci-Ling Pan "Correlation of carrier lifetimes and arsenic-antisite defects in LT-GaAs grown at different substrate temperatures", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); https://doi.org/10.1117/12.349311

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