Paper
24 May 1999 Terahertz emission spectroscopy of coherent phonons in semiconductors
Masahiko Tani, Ryoichi Fukasawa, Michael Herrmann, Kiyomi Sakai, Shin-ichi Nakashima, Nobuya Yoshioka, Akihiro Ishida, Hiroshi Fujiyasu
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Abstract
We investigate infrared-active coherent phonons excited in Te, PbTe (un-doped, n-type and p-type), and CdTe by observing the terahertz (THz) emission from these samples. Coherent THz emission corresponding to the longitudinal- optical (LO)-phonon frequency has been observed for all the samples, while no significant THz emission is observed at the transverse-optical (TO)-phonon frequency even at high carrier densities (> 1018 cm-3). The absence of THz emission at the TO-phonon frequency strongly contradicts the observation in the transient reflectivity measurements, where the signal oscillations at the TO-phonon frequencies arising from the LO-phonon-plasmon coupling (L_ mode) have been observed at high carrier densities. It is found from a model calculation that for a dipole oscillator on a sample surface the THz emission around the TO-phonon frequency is strongly suppressed due to the large dielectric constant near this frequency.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiko Tani, Ryoichi Fukasawa, Michael Herrmann, Kiyomi Sakai, Shin-ichi Nakashima, Nobuya Yoshioka, Akihiro Ishida, and Hiroshi Fujiyasu "Terahertz emission spectroscopy of coherent phonons in semiconductors", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); https://doi.org/10.1117/12.349285
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KEYWORDS
Phonons

Terahertz radiation

Dielectrics

Tellurium

Semiconductors

Signal detection

Reflectivity

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