Paper
20 January 1999 Variation of the deformation response of a silicon surface due to surface layer saturation with defects under pulsed and pulse-periodic laser radiation
Alexander F. Banishev, Vladimir S. Golubev, Alexei Yu. Kremnev
Author Affiliations +
Proceedings Volume 3688, 6th International Conference on Industrial Lasers and Laser Applications '98; (1999) https://doi.org/10.1117/12.337540
Event: 6th International Conference on Industrial Lasers and Laser Applications '98, 1998, Shatura, Moscow Region, Russian Federation
Abstract
The method of probe beam scattering was used to study the peculiarities of monocrystalline Si surface destruction under pulsed laser irradiation. The shape of scattering signal showed that in the exposure region a surface layer rich in defects is formed. A study has been made on its influence on dynamics of sample surface deformation.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander F. Banishev, Vladimir S. Golubev, and Alexei Yu. Kremnev "Variation of the deformation response of a silicon surface due to surface layer saturation with defects under pulsed and pulse-periodic laser radiation", Proc. SPIE 3688, 6th International Conference on Industrial Lasers and Laser Applications '98, (20 January 1999); https://doi.org/10.1117/12.337540
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KEYWORDS
Laser scattering

Scattering

Pulsed laser operation

Laser beam diagnostics

Silicon

Helium neon lasers

Semiconductor lasers

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