Modeling low-frequency fluctuations in semiconductor lasers with lateral carrier diffusion

M. S. Torre; Cristina Masoller; Neal Broadus Abraham

doi:10.1117/12.354756

19 July 1999 Modeling low-frequency fluctuations in semiconductor lasers with lateral carrier diffusion

M. S. Torre, Cristina Masoller, Neal Broadus Abraham

Proceedings Volume 3749, 18th Congress of the International Commission for Optics; (1999) https://doi.org/10.1117/12.354756
Event: ICO XVIII 18th Congress of the International Commission for Optics, 1999, San Francisco, CA, United States

Abstract

Low frequency fluctuations similar to those observed in experiments are found in a model that includes explicitly carrier diffusion and lateral profiles for the carriers and the optical field. We compare with the predictions of the standard model, that includes lateral effects phenomenologically though an additional gain saturation term.

Citation Download Citation

M. S. Torre, Cristina Masoller, and Neal Broadus Abraham "Modeling low-frequency fluctuations in semiconductor lasers with lateral carrier diffusion", Proc. SPIE 3749, 18th Congress of the International Commission for Optics, (19 July 1999); https://doi.org/10.1117/12.354756

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