Paper
19 October 1999 Optical engineering and characterization of the internal electric field of CdZnTe radiation detectors
H. Walter Yao, Ralph B. James, Jay Chris Erickson
Author Affiliations +
Abstract
A new method of engineering the internal electric field of CdZnTe (CZT) radiation detectors will be introduced. The internal electric field distribution within a CZT detector is engineered via an IR beam with a special photon energy and characterized by a separate polarized optical transmission profile beam utilizing the Pockels electro- optic effect. A theoretical model and calculation will be presented to understand the internal electric field engineering we have performed in our work. 2D images reflecting the internal electrical field intensity changes will be shown and the application of this field engineering method to improve the radiation detectors will be discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Walter Yao, Ralph B. James, and Jay Chris Erickson "Optical engineering and characterization of the internal electric field of CdZnTe radiation detectors", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366598
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CITATIONS
Cited by 12 scholarly publications.
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KEYWORDS
Sensors

Electric field sensors

Semiconductors

Electrons

Optical engineering

Electro optics

Infrared radiation

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