Prototyping for high-aspect-ratio MEMS by high-energy x-ray lithography using boron-carbide-based masks

Chantal G. Khan Malek; Steven Nguyen

doi:10.1117/12.360477

3 September 1999 Prototyping for high-aspect-ratio MEMS by high-energy x-ray lithography using boron-carbide-based masks

Chantal G. Khan Malek, Steven Nguyen

Author Affiliations +

Proceedings Volume 3875, Materials and Device Characterization in Micromachining II; (1999) https://doi.org/10.1117/12.360477
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States

Abstract

Low-cost and simple fabrication processes of masks for deep x-ray lithography are necessary for rapid prototyping of high-aspect-ratio microstructures by LIGA-like processes. Commercially available 4' diameter boron carbide substrates of 370 micrometers thickness were investigated as candidates for x-ray transparent mask blanks. High aspect ratio absorber structures were formed by gold electroplating after a x-ray lithographic step using an intermediate Kapton^TM mask. The characteristics for boron carbide masks in terms of x- ray transparency and mask contrast were assessed by simulating exposures into polymethyl methacrylate (PMMA) resist using the wavelength shifter at CAMD and compared to other materials combinations, in particular silicon and graphite-based mask blanks. The boron carbide-based masks proved easy to fabricate and were replicated into 300/500 micrometers PMMA resist at intermediate x-ray energies (5 - 15 keV) on a bending magnet beamline of the CAMD ring operating at 1.5 GeV electron energy. These masks were designed for exposure at high photon energy into very thick resist or stacked exposures and will be tested using the CAMD superconductive wavelength shifter as a source of hard x- rays and associated new high energy x-ray lithography station, when available for use.

Citation Download Citation

Chantal G. Khan Malek and Steven Nguyen "Prototyping for high-aspect-ratio MEMS by high-energy x-ray lithography using boron-carbide-based masks", Proc. SPIE 3875, Materials and Device Characterization in Micromachining II, (3 September 1999); https://doi.org/10.1117/12.360477

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