Recombination current for p-i-n junctions based on compensated semiconductor materials

Alexei V. Lyubchenko

doi:10.1117/12.368345

4 November 1999 Recombination current for p-i-n junctions based on compensated semiconductor materials

Alexei V. Lyubchenko

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368345
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

An energy diagram of a p-i-n junction made of compensated semiconductor materials involving electrically active deep recombination r-levels is proposed. The mechanism of current flow for forward bias under nonequilibrium charge carriers trapping and recombination in the high-resistance i-region formed due to the r-levels over compensation are analyzed. In the case of trapping: a) the nonequilibrium charge carriers lifetimes (tau) _n does not equal (tau) _p and the electron filing function f_n of r-levels are space- dependent; b) for injected carriers the potential wells separated by barriers are formed near then- and p-regions. An analysis of the corresponding recombination statistics gives a complicated shape of the I-V-curve, with a section where the ideality coefficient v varies in the 1 < v <EQ 2 and v > 2 divided by 4 ranges. Nonequilibrium charge carriers tunneling through the barriers is possible at low temperatures.

Citation Download Citation

Alexei V. Lyubchenko "Recombination current for p-i-n junctions based on compensated semiconductor materials", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368345

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