Ultralow-stress silicon-rich nitride films for microstructure fabrication

MingCheng Cheng; Wei-Gei Ho; Chin Piao Chang; Wen Sheh Huang; Ruey-Shing Star Huang

doi:10.1117/12.364478

1 October 1999 Ultralow-stress silicon-rich nitride films for microstructure fabrication

MingCheng Cheng, Wei-Gei Ho, Chin Piao Chang, Wen Sheh Huang, Ruey-Shing Star Huang

Proceedings Volume 3892, Device and Process Technologies for MEMS and Microelectronics; (1999) https://doi.org/10.1117/12.364478
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia

Abstract

We have set up a LPCVD system enabling us to deposit ultra low stress single layer silicon-rich nitride film at high temperature with fast deposition rate for micro-structures fabrication. Silicon-rich nitride films deposited at high temperature have ultra low stress and are relatively independent of silicon and nitrogen containing gas-flow ratio during deposition. Deposition process parameters were optimized employing Taguchi method and no post deposition process is required to obtain low stress films. Detailed study of the effects of deposition parameters on film properties is also presented. The high temperature deposited ultra low stress silicon rich nitride film is resistant to all commonly used silicon anisotropic etchants, an ideal material for various micro-structures fabrication.

Citation Download Citation

MingCheng Cheng, Wei-Gei Ho, Chin Piao Chang, Wen Sheh Huang, and Ruey-Shing Star Huang "Ultralow-stress silicon-rich nitride films for microstructure fabrication", Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); https://doi.org/10.1117/12.364478

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