Electrodeposited polycrystalline GaAs films and their characteristics

Chunhui Yang; Zhimei Zhang; Wusheng Xu; Aizhen Han

doi:10.1117/12.370357

12 November 1999 Electrodeposited polycrystalline GaAs films and their characteristics

Chunhui Yang, Zhimei Zhang, Wusheng Xu, Aizhen Han

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370357
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

The preparation of polycrystalline GaAs films by using electrodeposition technology is described. Influences of electrodeposition parameters on the quality of films were discussed, such as the current density, the relative concentration of ions, the value of pH of the electrolyte. On the basis of observing the micrographs, we have measured the chemical composition, microstructure and parameters of the energy band of the films. The result show that the composition of the films deposited is Ga_0.9946 As_1.0054, and the direct gap nature of the deposited material, its band gap is 1.40eV.

Citation Download Citation

Chunhui Yang, Zhimei Zhang, Wusheng Xu, and Aizhen Han "Electrodeposited polycrystalline GaAs films and their characteristics", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370357

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