Influence of pulse reversal on the characteristics of CdSe films

K. R. Murali; V. Swaminathan

doi:10.1117/12.370376

12 November 1999 Influence of pulse reversal on the characteristics of CdSe films

K. R. Murali, V. Swaminathan

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370376
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

This paper embodies the first report on the pulse reversal deposition of CdSe thin films. The as-deposited and heat treated films were characterized by XRD, optical absorption spectroscopy and electrical properties. The polycrystalline deposits of CdSe obtained indicated a hexagonal structure after heat treatment at 550°C. From the otpical absorption studies the bandgap was found to be 1.70 eV and absorption co-efficient of 10⁴ cm^-1 were obtained. At an illumination of 80 mWcm^-2 conversion efficiencies of 5.56% and 6.74% were obtained for the photoelectrodes without and with pulse reversal.

Citation Download Citation

K. R. Murali and V. Swaminathan "Influence of pulse reversal on the characteristics of CdSe films", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370376

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