Paper
9 November 1999 InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for long-wavelength infrared detection
Dao Hua Zhang, W. M. Zhang, P. H. Zhang, T. Osotchan, Soon Fatt Yoon, Xu Shi, Rong Liu, Teng Soon Wee
Author Affiliations +
Abstract
We report the fabrication and characterization of the n-type InGaAlAs/InAlAs multiple quantum well structures, lattice- matched to InP, for the long wavelength IR detection. It is found that strong absorption resulted from the intersubband transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width is kept unchanged. Our experimental result are in good agreement with the theoretical estimation based on simple finite barrier model and can be confirmed by the photoluminescence data.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dao Hua Zhang, W. M. Zhang, P. H. Zhang, T. Osotchan, Soon Fatt Yoon, Xu Shi, Rong Liu, and Teng Soon Wee "InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for long-wavelength infrared detection", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369396
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KEYWORDS
Absorption

Luminescence

Aluminum

Gallium

Long wavelength infrared

Quantum wells

Molecular beam epitaxy

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