Chemically amplified resists for electron-beam projection lithography mask fabrication

Christopher Magg; Michael J. Lercel

doi:10.1117/12.390064

21 July 2000 Chemically amplified resists for electron-beam projection lithography mask fabrication

Christopher Magg, Michael J. Lercel

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390064
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A positive tone chemically amplified (CA) resist, Shipley UVIII^TM, has been investigated for use in the fabrication of scattering electron-beam projection lithography (EPL) masks. Shipley UVIII is a DUV resist that also functions as a high resolution (sub 75 nm) e-beam resist with sensitivities of 12 - 30 (mu) C/cm² at 75 keV depending upon the bake parameters, and is currently used in the manufacture of advanced x-ray masks with 90 nm feature sizes. This paper discusses the issues associated with the implementation of CARs in EPL mask processing, including the thermal variations and mechanical distortions which can cause nonuniformities during resist processing. The performance of the resist was evaluated based on critical dimension (CD) uniformity across the mask and within individual membranes, image placement (IP) performance within an individual membrane, and image quality. CD uniformity of less than 15 nm 3 (sigma) has been achieved across the mask (approximately 50 X 50 mm area) and less than 10 nm 3 (sigma) has been achieved intramembrane (1.1 X 12.1 mm area), for 400 nm nominal feature sizes in resist. Pattern transfer etch processes for a TaSi scatter layer have also been developed.

Citation Download Citation

Christopher Magg and Michael J. Lercel "Chemically amplified resists for electron-beam projection lithography mask fabrication", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390064

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