Laser-produced plasma-based reflectometer for EUV metrology

Stanley Mrowka; James H. Underwood; Eric M. Gullikson; Phillip J. Batson

doi:10.1117/12.390124

21 July 2000 Laser-produced plasma-based reflectometer for EUV metrology

Stanley Mrowka, James H. Underwood, Eric M. Gullikson, Phillip J. Batson

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390124
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

An EUV/soft x-ray reflectometer is described which is based on a laser produced plasma source. Continuous wavelength scans in the range 4 nm to 40 nm are possible using a spherical grating monochromator. Focusing optics enable sub-millimeter illumination spot sizes to be achieved at the sample. Rotation and translation stages allow measurements to be made from grazing incidence to 85 degrees on samples as large as 200 mm diameter.

Citation Download Citation

Stanley Mrowka, James H. Underwood, Eric M. Gullikson, and Phillip J. Batson "Laser-produced plasma-based reflectometer for EUV metrology", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390124

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