Paper
2 June 2000 New voltage-contrast imaging method for detection of electrical failures
Mari Nozoe, Hidetoshi Nishiyama, Hiroyuki Shinada, Maki Tanaka
Author Affiliations +
Abstract
A new voltage contrast imaging method using single scan of high current electron beam has been developed. This method achieved the automatic inspection system, which detects electrical failures in acceptable amount of time. The sensitivity of the system is evaluated using open failure of via holes. First, the image contrast of poly-Si deposited on defective via holes is measured. Then the cross section of the defects is examined to obtain the correlation between contrast and the thickness of resistive residue at the bottom of the defective via holes. The result shows that this imaging method is capable of detecting 2 nm oxide remaining at the bottom of via.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mari Nozoe, Hidetoshi Nishiyama, Hiroyuki Shinada, and Maki Tanaka "New voltage-contrast imaging method for detection of electrical failures", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386512
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CITATIONS
Cited by 15 scholarly publications.
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KEYWORDS
Oxides

Electron beams

Resistance

Inspection

Semiconducting wafers

Imaging systems

Scanning electron microscopy

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