Paper
5 July 2000 Status of ArF lithography for the 130-nm technology node
Kurt G. Ronse, Geert Vandenberghe, Patrick Jaenen, Christie Delvaux, Diziana Vangoidsenhoven, Frieda Van Roey, Ingrid Pollers, Mireille Maenhoudt, Anne-Marie Goethals, Ivan K.A. Pollentier, Bert Vleeming, Koen van Ingen Schenau, Barbra Heskamp, Guy Davies, Jo Finders, Ardavan Niroomand
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Abstract
Lithographers are preparing their processes for the 130nm node. About one year ago, first generation full field ArF step and scan systems have been introduced in a number of fabs. These systems have lenses with numerical apertures in the order of 0.6. At the same time, 0.7 NA KrF step and scan systems have been introduced as well. Also last year, KrF resists were shown to be much more mature than ArF resists.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kurt G. Ronse, Geert Vandenberghe, Patrick Jaenen, Christie Delvaux, Diziana Vangoidsenhoven, Frieda Van Roey, Ingrid Pollers, Mireille Maenhoudt, Anne-Marie Goethals, Ivan K.A. Pollentier, Bert Vleeming, Koen van Ingen Schenau, Barbra Heskamp, Guy Davies, Jo Finders, and Ardavan Niroomand "Status of ArF lithography for the 130-nm technology node", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389029
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Cited by 2 scholarly publications.
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KEYWORDS
Lithography

193nm lithography

Photomasks

Manufacturing

Etching

Reticles

Dry etching

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