Luminescence of the InGaN/GaN blue light-emitting diodes

J. K. Sheu; Ting-Wei Yeh; GouChung Chi; M. J. Jou

doi:10.1117/12.389421

30 June 2000 Luminescence of the InGaN/GaN blue light-emitting diodes

J. K. Sheu, Ting-Wei Yeh, GouChung Chi, M. J. Jou

Proceedings Volume 4079, Display Technologies III; (2000) https://doi.org/10.1117/12.389421
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

InGaN/GaN double heterostructure and multiple quantum wells (MQW) light-emitting diodes were grown by metalorganic vapor phase epitaxy. Band gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the emission wavelength of EL and PL spectra for the MQW blue LEDs exhibit a blue-shift phenomenon when increasing the injection current and laser power, respectively. This luminescence behavior can tentatively be understood as a competition between a spectral red-shift mechanism of piezoelectrically-induced quantum-confined Stark effect and a blue-shift mechanism of band-filling and charge screening effects.

Citation Download Citation

J. K. Sheu, Ting-Wei Yeh, GouChung Chi, and M. J. Jou "Luminescence of the InGaN/GaN blue light-emitting diodes", Proc. SPIE 4079, Display Technologies III, (30 June 2000); https://doi.org/10.1117/12.389421

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