Paper
29 November 2000 Growth of HgBa2CaCu2Ox thin films on yttria-stabilized ZrO2 substrates with a buffer layer
J. D. Guo, Yunxi Sun, X. L. Xu, G. J. Lian, G. C. Xiong
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408314
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
High quality HgBa2CaCu2Ox (Hg-1212) films have been synthesized on yttria-stabilized ZrO2 substrates by using YBa2Cu3O7 (YBCO) as a buffer layer. These films with Hg-1212 as the major phase were found to possess Tc (R equals 0) > 115 K and Jc approximately 106 A/cm2 (at 77 K). The X-ray diffraction patterns indicated that the obtained films have an in-plane epitaxial structure with the c-axis perpendicular to the film surface. The morphological investigations on the film surfaces have revealed the occurrence of layered spiral-like growth features. The influence of the YBCO buffer layer on the growing of Hg-1212 films is discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. D. Guo, Yunxi Sun, X. L. Xu, G. J. Lian, and G. C. Xiong "Growth of HgBa2CaCu2Ox thin films on yttria-stabilized ZrO2 substrates with a buffer layer", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408314
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KEYWORDS
Thin films

Superconductors

Resistance

Technetium

Thin film growth

X-ray diffraction

Microwave radiation

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