Paper
29 November 2000 Magnetic properties of amorphous TbFeCo films
Yong Zhou, Chunsheng Yang, Di Zhou, Xiaolin Zhao
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408296
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
The effects of sputtering conditions on magnetic properties of amorphous TbFeCo films were investigated. By fixing the current set, the sputtering power reduces with the increase of sputtering Ar pressure, and the coercivity increases with the decrease of sputtering power, in contrast to the magnetization decreases. Film deposited at an Ar pressure of 0.42 Pa and a sputtering power of 7 W develops very good magnetization loops and high perpendicular anisotropy at room and low temperature. Magnetization measurements show that the in-plane magnetization loop at 10 K becomes larger with the increase of saturation magnetic field. This may be caused by the disorder of Tb atoms. At fixed Ar pressure, the coercivity decreases with the increasing sputtering power an the magnetization loop becomes narrow at high sputtering power. The effect of film thickness on magnetization loops is also studied.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong Zhou, Chunsheng Yang, Di Zhou, and Xiaolin Zhao "Magnetic properties of amorphous TbFeCo films", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408296
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KEYWORDS
Sputter deposition

Magnetism

Argon

Chemical species

Anisotropy

Terbium

Temperature metrology

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