In-situ ellipsometric measurements of thin film aluminum oxidation

Eric K. Lindmark; Janusz J. Nowak; Mark T. Kief

doi:10.1117/12.405822

2 November 2000 In-situ ellipsometric measurements of thin film aluminum oxidation

Eric K. Lindmark, Janusz J. Nowak, Mark T. Kief

Proceedings Volume 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries; (2000) https://doi.org/10.1117/12.405822
Event: International Symposium on Optical Science and Technology, 2000, San Diego, CA, United States

Abstract

In situ spectroscopic ellipsometry is a useful tool for characterizing the kinetics of aluminum oxide growth. Thin aluminum films were deposited on thermally oxidized silicon wafers and dosed with oxygen. Real-time in situ ellipsometry was used to monitor both natural and UV oxidation processes using different oxygen pressures. The raw data was subsequently fit to an optical multi-layer model. The ellipsometric data was sensitive to changes in the oxide layer thickness of much less than a monolayer. With the time scale of our data acquisition two different growth regimes were seen in the fitted data in agreement with the Mott-Cabrera model of oxidation. The growth rate became larger with the assistance of light from the UV lamp.

Citation Download Citation

Eric K. Lindmark, Janusz J. Nowak, and Mark T. Kief "In-situ ellipsometric measurements of thin film aluminum oxidation", Proc. SPIE 4099, Optical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries, (2 November 2000); https://doi.org/10.1117/12.405822

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