Intracavity processing of semiconductor monocrystalline surface

Nikolai S. Kazak; Vladimir P. Osipov; Vasily V. Valyavko

doi:10.1117/12.413759

30 January 2001 Intracavity processing of semiconductor monocrystalline surface

Nikolai S. Kazak, Vladimir P. Osipov, Vasily V. Valyavko

Proceedings Volume 4157, Laser-Assisted Microtechnology 2000; (2001) https://doi.org/10.1117/12.413759
Event: Laser-Assisted Microtechnology 2000, 2000, St. Petersburg-Pushkin, Russian Federation

Abstract

In this work there is described the improved construction of laser cavity which makes possible to form submicron periodic structures on the surface of such perspective but not high- reflective materials as semiconductor single-crystals. The experimental investigation of the intracavity processing of the pure single-crystalline surface of germanium and silicon by means of 1.06-micrometer radiation of neodymium glass laser shows that 0.3-micrometer width periodic structures may be formed even on the surfaces with the reflection coefficient lower than 40 percent.

Citation Download Citation

Nikolai S. Kazak, Vladimir P. Osipov, and Vasily V. Valyavko "Intracavity processing of semiconductor monocrystalline surface", Proc. SPIE 4157, Laser-Assisted Microtechnology 2000, (30 January 2001); https://doi.org/10.1117/12.413759

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available