Theory and simulation of self- and mutual-diffusion of carrier density and temperature in semiconductor lasers

Jianzhong Li; Samson H. Cheung; Cun-Zheng Ning

doi:10.1117/12.432574

9 July 2001 Theory and simulation of self- and mutual-diffusion of carrier density and temperature in semiconductor lasers

Jianzhong Li, Samson H. Cheung, Cun-Zheng Ning

Author Affiliations +

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432574
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Carrier diffusion and thermal conduction play a fundamental role in the operation of high-power, broad-area semiconductor lasers. Restricted geometry, high pumping level and dynamic instability lead to inhomogeneous spatial distribution of plasma density, temperature, as well as light field, due to strong light-matter interaction. Thus, modeling and simulation of such optoelectronic devices rely on detailed descriptions of carrier dynamics and energy transport in the system. A self-consistent description of lasing and heating in large-aperture, spatially-inhomogeneous edge- or surface-emitting lasers (VCSELs) require coupled diffusion equations for carrier density and temperature. In this paper, we derive such equations from the Boltzmann transport equation for the carrier distributions. The derived self- and mutual-diffusion coefficients are in general nonlinear functions of carrier density and temperature including many-body interactions. We study the effects of many-body interactions on these coefficients, as well as the nonlinearity of these coefficients for large-area VCSELs. The effects of mutual diffusions on carrier and temperature distributions in gain-guided VCSELs will be also presented.

Citation Download Citation

Jianzhong Li, Samson H. Cheung, and Cun-Zheng Ning "Theory and simulation of self- and mutual-diffusion of carrier density and temperature in semiconductor lasers", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432574

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