InGaAs/GaAsP/InGaP strain-compensated quantum well (lambda=1.17 um) diode lasers on GaAs

Nelson Tansu; Luke J. Mawst

doi:10.1117/12.429800

6 June 2001 InGaAs/GaAsP/InGaP strain-compensated quantum well (λ=1.17 um) diode lasers on GaAs

Nelson Tansu, Luke J. Mawst

Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429800
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

In this paper, we will discuss the growth, material characterization and device studies of the highly strained InGaAs-QW on GaAs, operating at (lambda) equals 1.17 micrometers . Variations in structure and MOCVD growth conditions will be discussed. High performance, (lambda) equals 1.165 micrometers laser emission is achieved from InGaAs-QW/GaAsP strain-compensated single quantum well laser structures, with threshold current densities of 65 A/cm² for 1500-micrometers -cavity devices and transparency current densities of 50 A/cm².

Citation Download Citation

Nelson Tansu and Luke J. Mawst "InGaAs/GaAsP/InGaP strain-compensated quantum well (λ=1.17 um) diode lasers on GaAs", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429800

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