Paper
20 August 2001 Highly accurate CD control at stitching region for electron-beam projection lithography
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Abstract
For electron beam projection lithography system, it is one of the most important issues to stitch desired patterns accurately. We have found a way to stitch the patterns with high accurate critical dimension by a pattern edge deformation that moderates a stitching error by as much as 2.5 times compared with no-deformed edge.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomoharu Fujiwara, Takeshi Irita, Sumito Shimizu, Hajime Yamamoto, and Kazuaki Suzuki "Highly accurate CD control at stitching region for electron-beam projection lithography", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436696
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Cited by 1 scholarly publication.
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KEYWORDS
Reticles

Critical dimension metrology

Semiconducting wafers

Projection lithography

Electron beams

Electron beam lithography

Optical simulations

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