Planarizing ARs for dual-damascene processing

Edward K. Pavelchek; Marjorie Cernigliaro; Peter Trefonas III; Amy Kwok; Suzanne Coley

doi:10.1117/12.436920

24 August 2001 Planarizing ARs for dual-damascene processing

Edward K. Pavelchek, Marjorie Cernigliaro, Peter Trefonas III, Amy Kwok, Suzanne Coley

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436920
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Via fill performance of AR7 (KrF anti-reflectant) and a prototype 193nm anti-reflectant were measured for 600 and 1000 nm deep vias in thermal oxide. Simple fitting functions were found which gave good agreement with experimental data (Rsq over 0.84). The most important factors were AR thickness, via duty ratio and via depth. The importance of these factors was different for the different anti-reflectants.

Citation Download Citation

Edward K. Pavelchek, Marjorie Cernigliaro, Peter Trefonas III, Amy Kwok, and Suzanne Coley "Planarizing ARs for dual-damascene processing", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436920

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