Analysis of optical gain of GaInNAs/GaAs compressive strained quantum well lasers

Weijun Fan; Soon Fatt Yoon; Ming Fu Li; Tow Chong Chong

doi:10.1117/12.444946

19 October 2001 Analysis of optical gain of GaInNAs/GaAs compressive strained quantum well lasers

Weijun Fan, Soon Fatt Yoon, Ming Fu Li, Tow Chong Chong

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444946
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

The electronics structures of the Ga_1-xIN_xN_yAs_1-y/GaAs compressive strained quantum wells(QWs) are investigated using 6x6 kxp Hamiltonian including the heavy hole, light hole and spin-orbit splitting band. By varying the well width and mole fraction of N in the well material, the effects of quantum confinement and compressive strain are examined. The curves of dependence of transition energy on well width and N mole fraction are obtained. The valence subband energy dispersion curves, density of states, TE and TM squared optical transition matrix elements and optical gain spectra of three possible quantum well structures for emitting 1.3micrometers wavelength are given.

Citation Download Citation

Weijun Fan, Soon Fatt Yoon, Ming Fu Li, and Tow Chong Chong "Analysis of optical gain of GaInNAs/GaAs compressive strained quantum well lasers", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444946

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