III-V-semiconductor-based surface-micromachined catilevers for micro-opto-electro-mechanical systems

Jin Mao; Hua Tong; Dan Zhou; Zhensheng Jia; Jianhua Wang; Shizhong Xie

doi:10.1117/12.444972

19 October 2001 III-V-semiconductor-based surface-micromachined catilevers for micro-opto-mechanical systems

Jin Mao, Hua Tong, Dan Zhou, Zhensheng Jia, Jianhua Wang, Shizhong Xie

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444972
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

Surface micromachining processes based on III-V compound semiconductors are presented in this paper, in order to develop Micro-Opto-Electro-Mechanical systems (MOEMS). By fabricating micro cantilevers composed of seven InP/Air gap pairs, the major techniques of the surface micromachining are studied, including non-selective and selective etching, rinsing and drying. A severe problem of the sticking phenomena during rinsing and drying is avoided by the implementation of the Critical Point Drying (CPD) method.

Citation Download Citation

Jin Mao, Hua Tong, Dan Zhou, Zhensheng Jia, Jianhua Wang, and Shizhong Xie "III-V-semiconductor-based surface-micromachined catilevers for micro-opto-mechanical systems", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444972

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