100-nm-pitch standard characterization for metrology applications

Marco Tortonese; Jerry Prochazka; Paul Konicek; Jason Schneir; Ian R. Smith

doi:10.1117/12.473495

16 July 2002 100-nm-pitch standard characterization for metrology applications

Marco Tortonese, Jerry Prochazka, Paul Konicek, Jason Schneir, Ian R. Smith

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473495
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In this paper we present and characterize a NIST-traceable, all-silicon, 100 nm pitch structure with the necessary quality attributes to calibrate CD-SEM tools used for metrology of sub-0.25 micron semiconductor process technology.

Citation Download Citation

Marco Tortonese, Jerry Prochazka, Paul Konicek, Jason Schneir, and Ian R. Smith "100-nm-pitch standard characterization for metrology applications", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473495

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